GaN, SiC and ZnO are typical of the third generation semiconductor materials after Si and GaAs materials. They are characterized by high breakdown electric field, high saturation electron velocity, high thermal conductivity, high electron density and high mobility. They are widely used in high voltage, high temperature, high frequency, high power anti-radiation microwave and millimeter wave devices and short wave length photo electronic semiconductor devices.
Wide band semiconductor devices are the most essential semiconductor devices in novel radar, communication and electromagnetic countermeasure systems. They are also the key devices in the new-generation semiconductor lighting equipment.
◇ GaN and SiC based wide band microwave and millimeter wave devices
◇ GaN based semiconductor photo electronic devices and semiconductor lighting technology
◇ Key equipment of wide band semiconductor material growth
◇ Novel mechanism, structure and technology of wide band semiconductor materials and devices
◇ Micro-nanometer semiconductor devices reliability and SoC design