Zhang Jinfeng Associate professor; doctorate holder; born in 1977; worked as a general visiting cooperative researcher at Sheffield University, Britain from February of 2009 to January of 2010.
Major research fields: GaN electronic material and device; (Al)GaN short-wavelength laser material and device
Achievements: She took charge of projects from the Xi’an Applied Material Innovation Fund and the New Teacher Fund for Doctoral Programs of the Institutions of Higher Learning. She also participated in the major projects from the National “973” Program, the Electronic Technology Development Fund, and the Major Items of the National Natural Science Foundation. In 2009, the research result that the optimized AlGaN MQW laser material produced low threshold ultraviolet stimulated emission was reported by the websites such as Semiconductor Today. From 2010 to 2011 she developed the InAlN/GaN electronic material and device whose performance has reached the international level. From 2006 to 2011 she published over 20 papers in the journals of “Applied Physics Letters”, “Chinese Physics (B)”, “ACTA PHYSICA SINICA”, “Science in China”, and “Chinese Journal of Semiconductors”. She has also applied for 4 patents.
Yang Lin’an Professor; advisor of Ph.D. candidates; doctorate holder; born in 1966; worked as a senior visiting scholar at the University of Tokushima, Japan from 2007 t0 2008, mainly engaged in the research on wide-band gap semiconductor material and device technology.
Major research fields: semiconductor THz key technology and mechanism; SiC and GaN electronic device mechanism and modeling; technology design and manufacture
He took charge of and participated in the VLSI major specialized projects from the National “863” Program and the projects from the National Defense Advance Research Program and the National Natural Science Foundation. He has published over 30 papers.
Feng Qian Associate professor; doctorate holder; bornin1976; worked as a senior visiting scholar at the National University of Singapore from 2009 to 2010 and did joint research on the GaN device.
Major research fields: surface features of wide-band gap semiconductor materials; research on the GaN electron device
Achievements: She participated in projects from the National “973” Program, Advance Research and Shape Spectrum projects, and projects from the National Electronic Information Industry Development Fund. She won 1 First Shaanxi Provincial Sci-tech Award in 2005 and won 1 Second National Technology Invention Award in 2009. She has published over 20 papers, which have been indexed by the three major indexing bodies for more than 10 times.