Research Projects and Achievements
Nitride semiconductor technology applications and industrializations(2)

Microwave power device material technology of GaN-based heterojunction has been applied widely in the Institutes of CETC and Institutes of Chinese Academy of Sciences since 2003. The X-band output power density of developed GaN microwave power device is greater than 10W/mm, and the total output power is over 60W. The properties of the microwave material have reached the international advanced level.

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