Research Projects and Achievements
National Invention Patents-3
  审核人:

槽栅型源场板高电子迁移率器件及其制作方法                                                    200810232513.x
槽栅型源-漏复合场板异质结场效应晶体管及其制作方法                                   200810232526.7
绝缘栅型栅-漏复合场板功率器件                                                                           200810232527.1
绝缘栅型源-漏复合场板高电子迁移率晶体管及其制作方法                               200810232528.6
凹槽绝缘栅型栅-漏复合场板功率器件及其制作方法                                           200810232529.0
凹槽绝缘栅型源-漏复合场板高电子迁移率晶体管                                               200810232530.3
Γ栅异质结场效应晶体管及其制作方法                                                                  200810232531.8
凹槽Γ栅高电子迁移率晶体管及其制作方法                                                          200810232534.1
凹槽绝缘交叠栅异质结场效应晶体管                                                                    200810232537.5
槽栅型栅-漏复合场板高电子迁移率晶体管                                                          200810232525.2
基于源场板和漏场板的复合场板异质结场效应晶体管                                       200810232524.8
凹槽绝缘栅型复合源场板的异质结场效应晶体管                                               200810232521.4
源场板高电子迁移率晶体管滤波方法                                                                   200810232547.9
MOCVD系统控制软件V1.0                                                                                          2004RS5972
随机控制系统控制软件                                                                                                  2003RS7605 
MOCVD自动温度控制软件                                                                                           软件著作权
多片式MOCVD自动控制软件                                                                                       软件著作权


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