Research Projects and Achievements
National Invention Patents-2
  审核人:

先刻槽自对准槽栅CMOS器件制造方法                                                               00114824. 9
◇ 后刻槽自对准槽栅CMOS器件制造方法                                                              00114822. 2
◇ 单面抛光衬底外延薄膜厚度和光学参数的测量方法                                   200510042863.6
GaAs基材料上原位淀积高介电常数Al2O3和金属膜的方法                        200510096232.2
GaN基发光二极管表面粗化的处理方法                                                        200710199280.3
集成电路功能成品率估计方法                                                                       200710018858.0
用于片上长线互连的差分接口电路                                                               200810018339.9
一种AlGaN/GaN HEMT器件的隔离方法                                                     200810017836.7
一种新型增强型AlGaN/GaN HEMT器件的实现方法                                 200810017835.2
GaN多层量子点光电材料的制作方法                                                           200810150272.4
AlGaN/GaN MISHEMT器件的制备方法                                                      200810150647.4
AlGaN材料表面淀积Al2O3界面过滤层的抑制方法                                     200810150645.8
◇ 电磁加热装置                                                                                                   200810232210.8
◇ 绝缘栅型源场板异质结场效应晶体管                                                           200810232512.5
凹槽绝缘栅型复合栅场板高电子迁移率器件                                               200810232518.2


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