Research Projects and Achievements
papers-2013
  审核人:
01.Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition. 
   
Nano Letters,Vol.13, No.8, pp: 3654-3657,August 14, 2013. Xu Shengrui, Hao Yue, Zhang Jincheng, Jiang Teng,Yang Linan, Lu Xiaoli,
        Lin Zhiyu.
02.Nucleation-Induced Self-Assembly of Multiferroic BiFeO3-CoFe2O4 Nanocomposites. 
   
Nano Letters,Vol.13, No.8, pp:3884-3889, 2013. Stratulat Sergiu M, Lu Xiaoli, Morelli Alessio, Hesse Dietrich, Erfurth Wilfried, and Alexe Mari
03.Universality of Polarization Switching Dynamics in Ferroelectric Capacitors Revealed by 5D piezoresponse Force Microscopy. 
   
Advanced Functional Materials,Vol. 23, No. 32, pp:3971-3979, August 26, 2013.Yunseok Kim, LuXiaoli, Stephen Jesse,Dietrich Hesse, Marin
         Alexe, Sergei V. Kalinin

04.Efficient “Light-soaking”- free Inverted Organic Solar Cells with Aqueous Solution Processed Low- Temperature ZnO
         Electron Extraction Layers.
 
   
ACS Applied Materials Interfaces, Vol.5, No.24, pp:13318-13324, 2013. Wei Wei, Zhang Chunfu, Chen Dazheng,
        Wang Zhizhe, Zhu Chunxiang, Zhang Jincheng, Lu Xiaoli, Hao Yue.

05.Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron- mobilitytransistors by dynamic
         capacitance dispersion technique.
 
   
Applied Physics Letters,Vol. 103, No.3, 033510, 2013. Ma Xiaohua, Zhu Jiejie, Liao Xueyang, Yue Tong, Chen Weiwei, Hao Yue.
06.Trap states in ALGaN channel high-electron mobility transistors. 
   
Applied Physics Letters,Vol.103, No.21, 212106, 2013. Zhao Shenglei, Zhang Kai, Ha Wei, Chen Yonghe, Zhang Peng,
        Zhang Jincheng, Ma Xiaohua, Hao Yue.

07.Performance comparison of conventional and inverted organic bulk heterojunction solar cells from optical and electrical aspects. 
   
IEEE Transactions on Electron Devices,Vol.60, No.1, pp:451-457, 2013. Chen Dazheng, Zhang Chunfu, Wang Zhizhe,Zhang Jincheng,
         Feng Qian, Xu Shengrui, Zhou Xiaowei, Hao Yue.

08.Improvement of the Anneal-Induced Valence Band Offset Variation by the Hybrid Deposition of HfO2 on Si. 
    I
EEE Transactions on Electron Devices,Vol.60,No.5, pp:1536-1539, 2013. Fan Jibin, Liu Hongxia, Ma Fei.
09.Modulation of Multidomain in AlGaN/GaN HEMT-Like Planar Gunn Diode. 
   
IEEE Transactions on Electron Devices,Vol.60, No.5, pp:1600-1606, 2013. Wang Ying, Yang Lin-An, Mao Wei,
         Long Shuang, Hao Yue.

10.Reproducibility in the negative differential resistance characteristic of In0.17Al0.83N/GaN resonant tunneling
         diodes - Theoretical investigation.
 
   
Journal of Applied Physics,Vol.113, No.19, 194509, 2013. Chen Haoran, Yang Lin'An, Long Shuang, Hao Yue.
11.Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode, 
   
Journal of Applied Physics,Vol.114, No.10, 104508, 2013. Li Liang, Yang Lin’an, Zhang Jincheng, Hao Yue.
12.Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors. 
   
Journal of Applied Physics,Vol.113, No.17, 174503, 2013. Zhang Kai, Xue Junshuai, Cao Mengyi, Yang Liyuan,
        Chen Yonghe, Zhang Jincheng, Ma Xiaohua, Hao Yue.

13.Influence of the interface acceptor-like traps on the transient response of AlGaN/GaN HEMTs. 
   
I EEE Electron Device Letters,Vol.34, No.1, pp:45-47, 2013. Zhang Wei, Zhang Yue, Mao Wei, Ma Xiaohua,
        Zhang Jincheng, HaoYue.

14.Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique. 
   
IEEE Electron Device Letters,Vol. 34, No. 7, pp:855-857, 2013. Xu Zhe, Wang Jinyan, Liu Yang, CaiJinbao, Liu Jingqian,Wang Maojun,
        Yu Min, Xie Bing, Wu Wengang, Ma Xiaohua, Zhang Jincheng.

15.Enlargement of Silicon Carbide Lely Platelet by Physical Vapor Transport Technique. 
   
Materials and Manufacturing Proces,Vol.28, No.11, pp:1248-1252, 2013. Shi Yonggui, Yang Xinghua, Wang Dong, Zhang Peng,
        Zhang Jincheng, Hao Yue, Yang Jianfeng.
 
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